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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1007
Title: Dopant activation in poly-Si1-xGex at low temperature
Authors: Jin, Zhonghe
Meng, Zhiguo
Gururaj, Bhat. A.
Yeung, Milton
Kwok, Hoi-Sing
Wong, Man
Keywords: Isothermal annealing
Silicon integrated circuits
Boron activation
Poly-SiGe
Dopant activation
Issue Date: Feb-1997
Citation: Proceedings of the Fourth Asian Symposium on Information Display (Feb 13-14, 1997), Hong Kong, HKUST, 1997. p. 65-68
Abstract: Isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3 to 0.55 was reported in this paper. In low temperature (<=600oC) annealing, gain boundary segregation causes both the conductivity and the Hall mobility to decrease during extended annealing. The effective activation of phosphorus was less than 20% and decreases with increasing Ge content. Boron activation could reach above 70%. It was also found that Si1-xGex could be oxidized at 600oC in a conventional furnace even with pure N2 protection.
URI: http://hdl.handle.net/1783.1/1007
Appears in Collections:ECE Conference Papers

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