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|Title: ||Dopant activation in poly-Si1-xGex at low temperature|
|Authors: ||Jin, Zhonghe|
Gururaj, Bhat. A.
|Keywords: ||Isothermal annealing|
Silicon integrated circuits
|Issue Date: ||Feb-1997 |
|Citation: ||Proceedings of the Fourth Asian Symposium on Information Display (Feb 13-14, 1997), Hong Kong, HKUST, 1997. p. 65-68|
|Abstract: ||Isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3 to 0.55 was reported in this paper. In low temperature (<=600oC) annealing, gain boundary segregation causes both the conductivity and the Hall mobility to decrease during extended annealing. The effective activation of phosphorus was less than 20% and decreases with increasing Ge content. Boron activation could reach above 70%. It was also found that Si1-xGex could be oxidized at 600oC in a conventional furnace even with pure N2 protection.|
|Appears in Collections:||ECE Conference Papers|
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