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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/1226
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| Title: | Characterization of buried nitride silicon-on-insulator substrate |
| Authors: | Poon, Vincent M. C.
Lam, Y. W.
Wong, S. P. |
| Keywords: | Silicon-on-insulator substrates
Buried insulator
Buried nitrides
Semiconductors
Synthesis |
| Issue Date: | Mar-1992 |
| Citation: | Semiconductor science and technology, v. 7, 1992, p. 414-417 |
| Abstract: | Buried nitride silicon-on-insulator (SOI) substrates prepared using stationary beam synthesis have been characterized. It is found that surface Si layers and alpha and beta-phase silicon nitride layers of good quality can be formed in the SOI structure if the implant and annealing conditions are suitably controlled. However, the high nitrogen content inside the surface Si layer has been found to create new problems to the direct fabrication of devices on the SOI substrate. |
| Rights: | Semiconductor Science and Technology © copyright 1992 IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/0268-1242/ |
| URI: | http://hdl.handle.net/1783.1/1226 |
| Appears in Collections: | ECE Journal/Magazine Articles
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| ss920323.pdf | | 214Kb | Adobe PDF | View/Open |
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