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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1237
Title: Range and annealing behaviour of Pb+ ions implanted into LiNbO3 crystals at moderate energies
Authors: Chen, Feng
Hu, Hui
Zhang, Jian-Hua
Liu, Xiang-Dong
Xia, Hui-Hao
Shi, Bo-Rong
Wang, Ke-Ming
Keywords: Pb+ ions
LiNbO3 crystals
Implantation
Channeling phenomena
Issue Date: Jan-2001
Citation: Chinese physics letters, v. 19, January 2002, p. 101-104
Abstract: Pb+ ions have been implanted into LiNbO3 crystals in the energy range of 100-350 keV at doses of 5x1015, 1x1016 and 2x1016 ions/cm2. The profile of the implanted ions was measured by Rutherford backscattering. The mean projected range and the range straggling obtained from the experiment were compared with the TRIM'98 and SRIM 2000 code. In the present case, the TRIM'98 code predicts experimental values better than those of the SRIM 2000 code. The depth distribution is also found to be independent of dose for 350 keV Pb+ implanted into LiNbO3 crystals. After 800°C annealing for 60 min in ambient air, obvious diffusion occurs to the implanted Pb+ ions at 150 keV with a dose of 5x1015 ions/cm2. After a low-temperature treatment at 77K in liquid nitrogen, no obvious diffusion phenomenon occurs for the implanted Pb+ ions in LiNbO3.
Rights: Chinese Physics Letters © copyright (2002) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
URI: http://hdl.handle.net/1783.1/1237
Appears in Collections:PHYS Journal/Magazine Articles

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