|
HKUST Institutional Repository >
Physics >
PHYS Journal/Magazine Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/1293
|
| Title: | Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices |
| Authors: | Li, Chang-Yi
Sun, Bao-Quan
Jiang, De-Sheng
Wang, Jiannong |
| Keywords: | GaAs/AIAs superlattices
Doped superlattices
Semiconductors |
| Issue Date: | Apr-2001 |
| Citation: | Semiconductor science and technology, v. 16, 2001, p. 239-242 |
| Abstract: | We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V (F )). As the peak-valley ratio in the V (F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V (F) curves into consideration, gives a good agreement with the experimental results. |
| Rights: | Semiconductor Science and Technology © Copyright (2001) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/SST |
| URI: | http://hdl.handle.net/1783.1/1293 |
| Appears in Collections: | PHYS Journal/Magazine Articles
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| s10409.pdf | | 141Kb | Adobe PDF | View/Open |
|
Find published version via |
All items in this Repository are protected by copyright, with all rights reserved.
|
