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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1293
Title: Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices
Authors: Li, Chang-Yi
Sun, Bao-Quan
Jiang, De-Sheng
Wang, Jiannong
Keywords: GaAs/AIAs superlattices
Doped superlattices
Semiconductors
Issue Date: Apr-2001
Citation: Semiconductor science and technology, v. 16, 2001, p. 239-242
Abstract: We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V (F )). As the peak-valley ratio in the V (F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V (F) curves into consideration, gives a good agreement with the experimental results.
Rights: Semiconductor Science and Technology © Copyright (2001) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/SST
URI: http://hdl.handle.net/1783.1/1293
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