HKUST Library Institutional Repository Banner

HKUST Institutional Repository >
Physics >
PHYS Journal/Magazine Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1315
Title: Ge islanding growth on nitridized Si and the effect of Sb surfactant
Authors: Hu, Yanfang
Wang, Xue-sen
Cue, Nelson
Wang, Xun
Keywords: Ge
Growth modes
Surfactants
Issue Date: 7-Oct-2002
Citation: Journal of physics. Condensed matter, v. 14, 2002, p. 8939-8946
Abstract: The growth modes of Ge islands on SiNx -covered Si with and without a surfactant Sb layer are studied by scanning tunnelling microscopy. It is observed that on SiNx /Si(111), Sb cannot enhance the coverage of (111) facets of Ge islands, which are the dominant features in the late stage of Ge overlayer growth when Sb is not used. However, on SiNx/Si(001), Sb favours the growth of Ge(001) facets, which will shrink during the islanding growth if Sb is not used. The different behaviours with the (111) and (001) substrates suggest that the surfactant effect of Sb on the islanding growth of Ge on SiNx/Si is strongly orientation dependent.
Rights: Journal of Physics: Condensed Matter © Copyright (2002) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM
URI: http://hdl.handle.net/1783.1/1315
Appears in Collections:PHYS Journal/Magazine Articles

Files in This Item:

File Description SizeFormat
c23903.pdf308KbAdobe PDFView/Open

Find published version via OpenURL Link Resolver

All items in this Repository are protected by copyright, with all rights reserved.