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|Title: ||Raman scattering and photoluminescence of ZnSxTe1−x mixed crystals|
|Authors: ||Liu, N. Z.|
Li, G. H.
Zhu, Z. M.
Han, H. X.
Wang, Z. P.
Sou, Philip Iam-Keong
|Keywords: ||Raman scattering|
|Issue Date: ||11-May-1998 |
|Citation: ||Journal of physics. Condensed matter, v. 10, 1998, p. 4119-4129|
|Abstract: ||We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1−x mixed crystals grown by MBE, covering the entire composition range (0 ≤ x < 1). The results of Raman studies show that the ZnSxTe1−x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the temperature dependence of the photoluminescence of ZnSxTe1−x have been employed to find out the origin of PL emissions in ZnSxTe1−x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).|
|Description: ||Journal of Physics: Condensed Matter © copyright (1998) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM|
|Appears in Collections:||PHYS Conference Papers|
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