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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1866
Title: Band effect : a possible mechanism for large magnetoresistance in non-magnetic materials
Authors: Xiong, Gang
Wang, Shidong
Wang, Xiang-Rong
Keywords: Magnetoresistance (MR)
Non-magnetic materials
Zeeman splitting
Electron density of state (DOS)
Issue Date: Jun-2000
Citation: Physical review. B, Condensed matter and materials physics, v. 61, no. 21, June 2000, p. 14335-14337
Abstract: Motivated by the recent observed unusual magnetoresistance in silver chalcogenides, we propose a new mechanism for large magnetoresistance (MR) in non-magnetic materials. We show that the Zeeman splitting can play a very important role in the MR under some conditions. In general, the electron density of state (DOS) can be divided into two parts, one for spin-up electrons and the other for spin-down. The two parts will shift against each other in an external magnetic field due to the Zeeman effect, leading to a substantial change in the carrier density when the original Fermi level is near the edge of the band and the Lande factor g of electrons is large. Thus, it can lead to a large positive MR.
Rights: Physical Review B - Condensed Matter and Materials Physics © copyright 2000 American Physical Society. The Journal's web site is located at http://prb.aps.org
URI: http://hdl.handle.net/1783.1/1866
Appears in Collections:PHYS Journal/Magazine Articles

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