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Title: A new lateral trench-gate conductivity modulated power transistor
Authors: Cai, Jun
Sin, Johnny K. O.
Ng, Wai Tung
Lai, Peter P. T.
Keywords: Conductivity
Power transistor
Lateral trench-gate bipolar transistor
Latchup current
Issue Date: Aug-1999
Citation: IEEE transactions on electron devices, v. 46, no. 8, Aug. 1999, p. 1788-1793
Abstract: In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latchup current density. Results indicate that the static and dynamic latchup current densities are improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n+ cathode length of 5 um . Dependence of the latchup current density of the LTGBT on the design of the n+ and p+ cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench gate and the p+ cathode is reduced. Specifically, as the space is decreased to 2 urn , no latch-up phenomenon was observed. This non-latchup characteristic is obtained at the expense of an increase (0.8 V) in threshold voltage.
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