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| Title: | A new lateral trench-gate conductivity modulated power transistor |
| Authors: | Cai, Jun
Sin, Johnny K. O.
Ng, Wai Tung
Lai, Peter P. T. |
| Keywords: | Conductivity
Power transistor
Lateral trench-gate bipolar transistor
Latchup current |
| Issue Date: | Aug-1999 |
| Citation: | IEEE transactions on electron devices, v. 46, no. 8, Aug. 1999, p. 1788-1793 |
| Abstract: | In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latchup current density. Results indicate that the static and dynamic latchup current densities are improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n+ cathode length of 5 um . Dependence of the latchup current density of the LTGBT on the design of the n+ and p+ cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench gate and the p+ cathode is reduced. Specifically, as the space is decreased to 2 urn , no latch-up phenomenon was observed. This non-latchup characteristic is obtained at the expense of an increase (0.8 V) in threshold voltage. |
| Rights: | © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. |
| URI: | http://hdl.handle.net/1783.1/2193 |
| Appears in Collections: | ECE Journal/Magazine Articles
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