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|Title: ||Characterization of light emitting porous polycrystalline silicon films|
|Authors: ||Poon, Vincent M. C.|
Han, P. G.
Sin, Johnny K. O.
|Keywords: ||Poycrystalline silicon|
Porous Si layers
Phosphorus-doped poly-Si films
|Issue Date: ||1997 |
|Citation: ||Advances in Microcrystalline and nanocrystalline Semiconductors-1996, Materials Research Society MRS Proc. Series V-431, International Academic Publishers 1997|
|Abstract: ||Luminescent porous poly-Si films with large areas or micron-sized patterns have been obtained by anodization or stain etching of phosphorus-doped poly-Si films deposited by low pressure chemical vapor deposition onto Si, thermal oxide or CVD nitride. The anodized film is composed of spherical Si grains with nano-pores formed around the surface. However, the stainetched film has large rectangular Si grains, and no nano-pores can be observed. The intensity of photoluminescence is enhanced after nitric acid boiling or stain etching, and is found to be closely related to the crystallinity of the porous Si layers.|
|Appears in Collections:||ECE Conference Papers|
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