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Title: Time dependent tunneling spectroscopy for studying surface diffusion confined in nanostructures
Authors: Wang, Kedong
Zhang, Chun
Loy, Michael M.
Xiao, Xudong
Keywords: Silicon
Elemental semiconductors
Surface diffusion
Scanning tunnelling microscopy
Nanostructured materials
Issue Date: 25-Jan-2005
Citation: Physical review letters, v. 94, p. 036103, 2005
Abstract: By confining a diffusion atom in a nanometer region using surface potential heterogeneity, we have successfully employed a time-dependent tunneling spectroscopy to quantitatively study its random motion. A hopping rate in the range of 1-104 Hz, ~3 orders of magnitude faster than those accessible by the existing diffusion methods based on scanning tunneling microscopy, was demonstrated for single Cu atoms diffusing in the faulted half unit cell of Si(111)7x7. Our technique is potentially useful to detect fast diffusion processes such as H quantum diffusion at atomic scale.
Rights: Phys. Rev. Lett. © copyright (2005) American Physical Society. The Journal's web site is located at
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