|
HKUST Institutional Repository >
Physics >
PHYS Journal/Magazine Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/2766
|
| Title: | Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1–xNx alloys: A microphotoluminescence study |
| Authors: | Tan, P. H.
Luo, X. D.
Xu, Z. Y.
Zhang, Y.
Mascarenhas, A.
Xin, H. P.
Tu, C. W.
Ge, Wei-Kun |
| Keywords: | Gallium compounds
Gallium arsenide
III-V semiconductors
Energy gap
Photoluminescence
Conduction bands
Semiconductor doping |
| Issue Date: | 27-May-2006 |
| Citation: | Physical review. B, v. 73, 205205 (2006) |
| Abstract: | Using microphotoluminescence (µ-PL), in dilute N GaAs1–xNx alloys, we observe a PL band far above the bandgap E0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (>100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L1c or Nx). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with µ-PL allows direct observation of above-bandgap transitions that are not usually accessible by PL. |
| Rights: | Physical Review B © copyright (2006) American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
| URI: | http://hdl.handle.net/1783.1/2766 |
| Appears in Collections: | PHYS Journal/Magazine Articles
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| 205205.pdf | | 475Kb | Adobe PDF | View/Open |
|
All items in this Repository are protected by copyright, with all rights reserved.
|
