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|Title: ||Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1–xNx alloys: A microphotoluminescence study|
|Authors: ||Tan, P. H.|
Luo, X. D.
Xu, Z. Y.
Xin, H. P.
Tu, C. W.
|Keywords: ||Gallium compounds|
|Issue Date: ||27-May-2006 |
|Citation: ||Physical review. B, v. 73, 205205 (2006)|
|Abstract: ||Using microphotoluminescence (µ-PL), in dilute N GaAs1–xNx alloys, we observe a PL band far above the bandgap E0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (>100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L1c or Nx). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with µ-PL allows direct observation of above-bandgap transitions that are not usually accessible by PL.|
|Rights: ||Physical Review B © copyright (2006) American Physical Society. The Journal's web site is located at http://prb.aps.org/|
|Appears in Collections:||PHYS Journal/Magazine Articles|
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