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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2768
Title: Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Authors: Xu, S. J.
Li, G. D.
Wang, Y. J.
Zhao, Y.
Chen, G. H.
Zhao, D. G.
Zhu, J. J.
Yang, H.
Yu, D. P.
Wang, Jiannong
Keywords: Indium compounds
Gallium compounds
III-V semiconductors
Silicon
Elemental semiconductors
Semiconductor quantum dots
Electron-phonon interactions
Photoluminescence
Spontaneous emission
Issue Date: 20-Feb-2006
Citation: Applied physics letters, v. 88, 083123 (2006)
Abstract: Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ~0.2 and 200 cm–1, respectively, for the InGaN QDs.
Rights: Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/apl
URI: http://hdl.handle.net/1783.1/2768
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