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|Title: ||Resistivity minima and Kondo effect in ferromagnetic GaMnAs films|
|Authors: ||He, Hongtao|
Wang, Y. Q.
|Keywords: ||Gallium arsenide|
Magnetic thin films
Semiconductor thin films
|Issue Date: ||17-Oct-2005 |
|Citation: ||Applied physics letters, v. 87, 162506 (2005)|
|Abstract: ||The temperature dependence of the resistivity of ferromagnetic GaMnAs, as-grown or low-temperature-annealed samples is measured from 2 to 290 K. A resistivity minimum is observed with a corresponding temperature TM around 10 K for each sample. Below TM, the resistivity exhibits logarithmic temperature dependence, as alpha ln(T), and alpha is independent of the external magnetic field up to 9 T. Such behavior is explained in terms of the Kondo effect arising from the presence of Mn interstitials in the GaMnAs samples. In addition, a well-defined T-squared dependence of resistivity is found in the temperature range between TM and the Curie temperature (TC), which is attributed to single magnon scattering.|
|Rights: ||Applied Physics Letters © copyright (2005) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/apl|
|Appears in Collections:||PHYS Journal/Magazine Articles|
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