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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2770
Title: Resistivity minima and Kondo effect in ferromagnetic GaMnAs films
Authors: He, Hongtao
Yang, Chunlei
Ge, Wei-Kun
Wang, Jiannong
Dai, Xi
Wang, Y. Q.
Keywords: Gallium arsenide
Gallium compounds
III-V semiconductors
Ferromagnetic materials
Magnetic thin films
Semiconductor thin films
Electrical resistivity
Kondo effect
Curie temperature
Magnons
Magnetic semiconductors
Issue Date: 17-Oct-2005
Citation: Applied physics letters, v. 87, 162506 (2005)
Abstract: The temperature dependence of the resistivity of ferromagnetic GaMnAs, as-grown or low-temperature-annealed samples is measured from 2 to 290 K. A resistivity minimum is observed with a corresponding temperature TM around 10 K for each sample. Below TM, the resistivity exhibits logarithmic temperature dependence, as alpha ln(T), and alpha is independent of the external magnetic field up to 9 T. Such behavior is explained in terms of the Kondo effect arising from the presence of Mn interstitials in the GaMnAs samples. In addition, a well-defined T-squared dependence of resistivity is found in the temperature range between TM and the Curie temperature (TC), which is attributed to single magnon scattering.
Rights: Applied Physics Letters © copyright (2005) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/apl
URI: http://hdl.handle.net/1783.1/2770
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