|
HKUST Institutional Repository >
Physics >
PHYS Journal/Magazine Articles >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/2770
|
| Title: | Resistivity minima and Kondo effect in ferromagnetic GaMnAs films |
| Authors: | He, Hongtao
Yang, Chunlei
Ge, Wei-Kun
Wang, Jiannong
Dai, Xi
Wang, Y. Q. |
| Keywords: | Gallium arsenide
Gallium compounds
III-V semiconductors
Ferromagnetic materials
Magnetic thin films
Semiconductor thin films
Electrical resistivity
Kondo effect
Curie temperature
Magnons
Magnetic semiconductors |
| Issue Date: | 17-Oct-2005 |
| Citation: | Applied physics letters, v. 87, 162506 (2005) |
| Abstract: | The temperature dependence of the resistivity of ferromagnetic GaMnAs, as-grown or low-temperature-annealed samples is measured from 2 to 290 K. A resistivity minimum is observed with a corresponding temperature TM around 10 K for each sample. Below TM, the resistivity exhibits logarithmic temperature dependence, as alpha ln(T), and alpha is independent of the external magnetic field up to 9 T. Such behavior is explained in terms of the Kondo effect arising from the presence of Mn interstitials in the GaMnAs samples. In addition, a well-defined T-squared dependence of resistivity is found in the temperature range between TM and the Curie temperature (TC), which is attributed to single magnon scattering. |
| Rights: | Applied Physics Letters © copyright (2005) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/apl |
| URI: | http://hdl.handle.net/1783.1/2770 |
| Appears in Collections: | PHYS Journal/Magazine Articles
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| 162506.pdf | | 284Kb | Adobe PDF | View/Open |
|
All items in this Repository are protected by copyright, with all rights reserved.
|
