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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2773
Title: Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices
Authors: Yang, Chunlei
Lu, Ding
Wang, Jiannong
Fung, Kwok Kwong
Ge, Wei-Kun
Hu, Liang
Yu, L. S.
Qi, Y. D.
Wang, D. L.
Lu, Z. D.
Lau, Ka-Ming
Keywords: Indium compounds
Gallium compounds
III-V semiconductors
Wide band gap semiconductors
Quantum well devices
Light emitting devices
Photoluminescence
Electroluminescence
Stacking faults
Transmission electron microscopy
Issue Date: 25-Jul-2005
Citation: Journal of applied physics, v. 98, 023703 (2005)
Abstract: We have studied the temperature-dependent carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices using various optical techniques such as photoluminescence, electroluminescence, and photoluminescence excitation spectra. The role of the defects in the GaN barrier neighboring to the InGaN region was demonstrated clearly in capturing carriers only at low temperatures. The physical origin of the defects was most possibly attributed to the stacking faults at the interface according to the high-resolution transmission electron spectroscopy pictures.
Rights: Journal of Applied Physics © copyright (2005) American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap
URI: http://hdl.handle.net/1783.1/2773
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