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|Title: ||Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices|
|Authors: ||Yang, Chunlei|
Fung, Kwok Kwong
Yu, L. S.
Qi, Y. D.
Wang, D. L.
Lu, Z. D.
|Keywords: ||Indium compounds|
Wide band gap semiconductors
Quantum well devices
Light emitting devices
Transmission electron microscopy
|Issue Date: ||25-Jul-2005 |
|Citation: ||Journal of applied physics, v. 98, 023703 (2005)|
|Abstract: ||We have studied the temperature-dependent carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices using various optical techniques such as photoluminescence, electroluminescence, and photoluminescence excitation spectra. The role of the defects in the GaN barrier neighboring to the InGaN region was demonstrated clearly in capturing carriers only at low temperatures. The physical origin of the defects was most possibly attributed to the stacking faults at the interface according to the high-resolution transmission electron spectroscopy pictures.|
|Rights: ||Journal of Applied Physics © copyright (2005) American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap|
|Appears in Collections:||PHYS Journal/Magazine Articles|
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