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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2938
Title: Resonant Raman scattering with the E+ band in a dilute GaAs1−xNx alloy (x=0.1%)
Authors: Tan, P. H.
Xu, Z. Y.
Luo, X. D.
Ge, Wei-Kun
Zhang, Y.
Mascarenhas, A.
Xin, H. P.
Tu, C. W.
Keywords: Raman spectra
Photoluminescence
Conduction bands
Electron-phonon interactions
Gallium arsenide
III-V semiconductors
Gallium compounds
Wide band gap semiconductors
Heavily doped semiconductors
Semiconductor doping
Issue Date: 4-Sep-2006
Citation: Applied physics letters, v. 89, 101912 (2006)
Abstract: Resonant Raman scattering has been applied to a dilute GaAs1−xNx alloy with 0.1% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously. All these Raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called E+ transition. This study provides additional insights into how the GaAs host conduction band states are perturbed and thus the electron-phonon interaction is affected by the N doping.
Rights: Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
URI: http://hdl.handle.net/1783.1/2938
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