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|Title: ||Resonant Raman scattering with the E+ band in a dilute GaAs1−xNx alloy (x=0.1%)|
|Authors: ||Tan, P. H.|
Xu, Z. Y.
Luo, X. D.
Xin, H. P.
Tu, C. W.
|Keywords: ||Raman spectra|
Wide band gap semiconductors
Heavily doped semiconductors
|Issue Date: ||4-Sep-2006 |
|Citation: ||Applied physics letters, v. 89, 101912 (2006)|
|Abstract: ||Resonant Raman scattering has been applied to a dilute GaAs1−xNx alloy with 0.1% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously. All these Raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called E+ transition. This study provides additional insights into how the GaAs host conduction band states are perturbed and thus the electron-phonon interaction is affected by the N doping.|
|Rights: ||Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/|
|Appears in Collections:||PHYS Journal/Magazine Articles|
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