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|Title: ||Unusual carrier thermalization in a dilute GaAs1−xNx alloy|
|Authors: ||Tan, P. H.|
Xu, Z. Y.
Luo, X. D.
Xin, H. P.
Tu, C. W.
|Keywords: ||Gallium compounds|
Spectral line breadth
Spectral line shift
Electronic density of states
Semiconductor thin films
|Issue Date: ||5-Feb-2007 |
|Citation: ||Applied physics letters, v. 90, 061905 (2007)|
|Abstract: ||Photoluminescence (PL) properties of the E0, E0+Δ0, and E+ bands in an x=0.62% GaAs1−xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2kBT, suggesting peculiar density of states and carrier dynamics of the E+ band.|
|Rights: ||Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/|
|Appears in Collections:||PHYS Journal/Magazine Articles|
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