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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2940
Title: Unusual carrier thermalization in a dilute GaAs1−xNx alloy
Authors: Tan, P. H.
Xu, Z. Y.
Luo, X. D.
Ge, Wei-Kun
Mascarenhas, A.
Xin, H. P.
Tu, C. W.
Keywords: Gallium compounds
Gallium arsenide
III-V semiconductors
Photoluminescence
Spectral line breadth
Hot carriers
Spectral line shift
Electronic density of states
Semiconductor thin films
Issue Date: 5-Feb-2007
Citation: Applied physics letters, v. 90, 061905 (2007)
Abstract: Photoluminescence (PL) properties of the E0, E00, and E+ bands in an x=0.62% GaAs1−xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2kBT, suggesting peculiar density of states and carrier dynamics of the E+ band.
Rights: Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
URI: http://hdl.handle.net/1783.1/2940
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