HKUST Library Institutional Repository Banner

HKUST Institutional Repository >
Electronic and Computer Engineering  >
ECE Journal/Magazine Articles >

Please use this identifier to cite or link to this item:
Title: Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization
Authors: Meng, Zhiguo
Zhao, Shuyun
Wu, Chunya
Zhang, Bo
Wong, Man
Keywords: Metal-induced crystallization (MIC)
Nickel gettering
Polycrystalline silicon (poly-Si)
Thin-film transistors (TFTs)
Issue Date: Sep-2006
Citation: Journal of display technology, vol. 2, no. 3, September 2006, p. 265-273
Abstract: Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70 ~ 80 cm2 /V ⋅ s and 40 ~ 50 cm2 /V ⋅ s, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability.
Rights: © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Appears in Collections:ECE Journal/Magazine Articles

Files in This Item:

File Description SizeFormat
poly.pdfpre-published version2153KbAdobe PDFView/Open

Find published version via OpenURL Link Resolver

All items in this Repository are protected by copyright, with all rights reserved.