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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3045
Title: Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization
Authors: Meng, Zhiguo
Zhao, Shuyun
Wu, Chunya
Zhang, Bo
Wong, Man
Keywords: Metal-induced crystallization (MIC)
Nickel gettering
Polycrystalline silicon (poly-Si)
Thin-film transistors (TFTs)
Issue Date: Sep-2006
Citation: Journal of display technology, vol. 2, no. 3, September 2006, p. 265-273
Abstract: Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70 ~ 80 cm2 /V ⋅ s and 40 ~ 50 cm2 /V ⋅ s, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability.
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URI: http://hdl.handle.net/1783.1/3045
Appears in Collections:ECE Journal/Magazine Articles

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