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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3047
Title: Passivation effects of aluminum on polycrystalline silicon thin-film transistor with metal-replaced junctions
Authors: Zhang, Dongli
Wong, Man
Keywords: Aluminum
Passivation
Polycrystalline silicon
Thin-film transistor (TFT)
Issue Date: Feb-2007
Citation: IEEE electron device letters, v. 28, no. 2, February 2007, p. 126-128
Abstract: Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher ON-state current, and improved immunity against short-channel effects. These improvements are consistent with a measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel.
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URI: http://hdl.handle.net/1783.1/3047
Appears in Collections:ECE Journal/Magazine Articles

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