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|Title: ||Large-grain polysilicon crystallization enhancement using pulsed RTA|
|Authors: ||Cheng, C. F.|
Leung, T. C.
Poon, Vincent M. C.
|Keywords: ||Amorphous semiconductors|
Rapid thermal annealing
Thin film transistors
|Issue Date: ||2004 |
|Citation: ||IEEE electron device letters, v. 25, no. 8, Aug. 2004, p. 553-555|
|Abstract: ||Enhanced metal- induced lateral crystallization (MILC) using a pulsed rapid thermal annealing (PRTA) technique to form a large-grain polysilicon layer has been investigated. By applying high temperature for a short period of time, MILC is enhanced while the background solid phase crystallization is suppressed. Experimental results show that the PRTA method is capable of increasing the rate of directional crystallization and improving the crystal quality of the recrystallized polysilicon layer. The overall annealing time and total thermal budget to achieve similar grain size as in constant temperature annealing is also reduced.|
|Rights: ||© 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.|
|Appears in Collections:||ECE Journal/Magazine Articles|
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