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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3308
Title: Anomalous photocurrent observed in an Fe–ZnS : Fe Schottky diode
Authors: Li, Baikui
Wang, Chao
Sou, Philip Iam-Keong
Ge, Wei-Kun
Wang, Jiannong
Keywords: II-VI semiconductors
Interface states
Iron
Molecular beam epitaxial growth
Photoconductivity
Photoionisation
Schottky diodes
Semiconductor epitaxial layers
Semiconductor-metal boundaries
Zinc compounds
Issue Date: Oct-2007
Citation: Applied physics letters, v. 91, 172104 (2007)
Abstract: Anomalous photocurrent was observed in an epitaxial Fe/Zn0.96Fe0.04S Schottky diode grown by molecular beam epitaxy. The temperature dependent decay behavior of the anomalous photocurrent has been studied. A model based on the photoionization of the acceptorlike interface states is proposed to explain this anomalous phenomenon. By fitting the decay curves of the anomalous photocurrent at different temperatures, ionization energy of the interface states is obtained from an Arrhenius plot of the decay time constants. We believe that these interface states are associated with some complex (Fe, S) defects formed at the Fe/ZnFeS interface.
Rights: Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/apl/
URI: http://hdl.handle.net/1783.1/3308
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