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| Title: | Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy |
| Authors: | Ji, Changjian
Cao, X. C.
Han, Q. F.
Qiu, Kai
Zhong, Fei
Li, X. H.
He, Hongtao
Wang, Jiannong
Wang, Y. Q. |
| Keywords: | Annealing
Gallium arsenide
III-V semiconductors
Manganese compounds
X-ray absorption
Ferromagnetic materials
Magnetic semiconductors
Localised states |
| Issue Date: | 4-Jun-2007 |
| Citation: | Applied physics letters, v. 90, 232501 (2007) |
| Abstract: | A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As2/Ga flux ratio. It is found that the L3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d5 high-spin state is obtained. It can be attributed to breaking the MnS–MnI pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. |
| Rights: | Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
| URI: | http://hdl.handle.net/1783.1/3642 |
| Appears in Collections: | PHYS Journal/Magazine Articles
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| wangjapl07.pdf | | 82Kb | Adobe PDF | View/Open |
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