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Title: Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy
Authors: Ji, Changjian
Cao, X. C.
Han, Q. F.
Qiu, Kai
Zhong, Fei
Li, X. H.
He, Hongtao
Wang, Jiannong
Wang, Y. Q.
Keywords: Annealing
Gallium arsenide
III-V semiconductors
Manganese compounds
X-ray absorption
Ferromagnetic materials
Magnetic semiconductors
Localised states
Issue Date: 4-Jun-2007
Citation: Applied physics letters, v. 90, 232501 (2007)
Abstract: A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As2/Ga flux ratio. It is found that the L3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d5 high-spin state is obtained. It can be attributed to breaking the MnS–MnI pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing.
Rights: Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at
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