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Title: Method for the deposition of diamond on a substrate
Authors: Hiraoka, Hiroyuki
Latsch, Stefan A.
Xiao, Rong-Fu
Keywords: Diamond
Laser ablation
Issue Date: 29-Nov-1994
Citation: US Patent 5,368,681. Washington, DC: US Patent and Trademark Office, 1994.
Abstract: A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <>
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CHEM Patents

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