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|Title: ||Method for the deposition of diamond on a substrate|
|Authors: ||Hiraoka, Hiroyuki|
Latsch, Stefan A.
|Issue Date: ||29-Nov-1994 |
|Citation: ||US Patent 5,368,681. Washington, DC: US Patent and Trademark Office, 1994.|
|Abstract: ||A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.|
|Rights: ||This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=63>|
|Appears in Collections:||PHYS Patents|
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