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|Title: ||Visible-blind UV detectors|
|Authors: ||Sou, Philip Iam-Keong|
Choi, Lai Man
Wong, George K. L.
|Keywords: ||Electrm traps|
Semiconductor epitaxial layers
|Issue Date: ||26-Mar-2002 |
|Citation: ||US Patent 6,362,483. Washington, DC: US Patent and Trademark Office, 2002.|
|Abstract: ||Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel sturcture is provided to give high quantum efficiency. The invention also discloses UV detectors with an active layer of pure ZnS and with an active layer of ZnSSe.|
|Rights: ||This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=116>|
|Appears in Collections:||PHYS Patents|
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