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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/414
Title: Visible-blind UV detectors
Authors: Sou, Philip Iam-Keong
Ma, Zhaohui
Choi, Lai Man
Yang, Zhi-Yu
Wong, Kam-Sing
Wong, George K. L.
Keywords: Electrm traps
Tellurium
ZnSTe
Photodiodes
Schottky diodes
UV detectors
Semiconductor epitaxial layers
Issue Date: 26-Mar-2002
Citation: US Patent 6,362,483. Washington, DC: US Patent and Trademark Office, 2002.
Abstract: Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel sturcture is provided to give high quantum efficiency. The invention also discloses UV detectors with an active layer of pure ZnS and with an active layer of ZnSSe.
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=116>
URI: http://hdl.handle.net/1783.1/414
Appears in Collections:PHYS Patents

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