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Title: Thin film transistor
Authors: Sin, Johnny K. O.
Kottarath Parambil, Anish Kumar
Keywords: Thin film transistor
Issue Date: 9-Feb-1999
Citation: US Patent 5,869,847. Washington, DC: US Patent and Trademark Office, 1999.
Abstract: A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain. By means of this arrangement in the offset region is conduction is by way of both electron and hole carriers and the offset region is conductivity modulated. The TFT of the present invention has lower on-resistance than a conventional thin film transistor.
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <>
Appears in Collections:IELM Patents

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