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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/454
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| Title: | Thin film transistor |
| Authors: | Sin, Johnny K. O.
Kottarath Parambil, Anish Kumar |
| Keywords: | Thin film transistor |
| Issue Date: | 9-Feb-1999 |
| Citation: | US Patent 5,869,847. Washington, DC: US Patent and Trademark Office, 1999. |
| Abstract: | A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain. By means of this arrangement in the offset region is conduction is by way of both electron and hole carriers and the offset region is conductivity modulated. The TFT of the present invention has lower on-resistance than a conventional thin film transistor. |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=341> |
| URI: | http://hdl.handle.net/1783.1/454 |
| Appears in Collections: | IELM Patents
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Files in This Item:
| File |
Description |
Size | Format |
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| US5869847.pdf | | 350Kb | Adobe PDF | View/Open |
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