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|Title: ||Electromigration studies of Cu/carbon nanotube composite interconnects using blech structure|
|Authors: ||Chan, Philip C. H.|
Chuang, Y. C.
Liu, C. Y.
|Keywords: ||Carbon nanotube (CNT)|
|Issue Date: ||Sep-2008 |
|Citation: ||IEEE electron device letters, v. 29, no. 9, September 2008, p. 1001-1003|
|Abstract: ||The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106 A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density–length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.|
|Rights: ||© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.|
|Appears in Collections:||ECE Journal/Magazine Articles|
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