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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6025
Title: Electromigration studies of Cu/carbon nanotube composite interconnects using blech structure
Authors: Chan, Philip C. H.
Chai, Yang
Fu, Yunyi
Chuang, Y. C.
Liu, C. Y.
Keywords: Carbon nanotube (CNT)
Composite
Electromigration (EM)
Interconnect
Issue Date: Sep-2008
Citation: IEEE electron device letters, v. 29, no. 9, September 2008, p. 1001-1003
Abstract: The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106 A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density–length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.
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URI: http://hdl.handle.net/1783.1/6025
Appears in Collections:ECE Journal/Magazine Articles

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