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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6106
Title: Electronic structure in gapped graphene with a Coulomb potential
Authors: Zhu, Wei
Wang, Zhengfei
Shi, Qinwei
Szeto, Kwok-Yip
Chen, Jie
Hou, J. G.
Keywords: Electric potential
Electron spin polarisation
Electronic structure
Graphene
Impurity states
Photoemission
Potential energy functions
Quantum electrodynamics
Issue Date: 17-Apr-2009
Citation: Physical review B, v. 79, iss. 15, p. 155430, 2009
Abstract: In this paper, we numerically study bound electron states induced by long-range Coulomb impurities in gapped graphene and quasibound states in the supercritical region based on the lattice model. We present a detailed comparison between our numerical calculations and the prediction of quantum electrodynamics 2+1(QED) continuum model. Furthermore, the supercritical charge has been determined by both the lattice model and the continuum model. The numerical results show that the behavior of quasibound state is consistent with the prediction using Fano’s formalism.
Rights: Physical review B © copyright 2009 American Physical Society. The Journal's web site is located at http://prb.aps.org
URI: http://hdl.handle.net/1783.1/6106
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