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|Title: ||Atomistic modeling of fluorine implantation and diffusion in III-nitride semiconductors|
|Authors: ||Yuan, Li|
Chen, Kevin J.
|Keywords: ||Fluorine implantation|
|Issue Date: ||Dec-2008 |
|Citation: ||IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, USA, 15-17 December 2008, p. 1-4|
|Abstract: ||A hybrid molecular dynamics (MD)/kinetic Monte Carlo (KMC) model is developed for atomistic modeling of fluorine ion implantation and diffusion in AlGaN/GaN heterostructures. The MD simulation reveals the F distribution profiles and the corresponding defect profiles, and most importantly, the potential energies of fluorine ions in the III-nitride material system. Using the results from the MD simulation, the diffusion process is simulated with KMC method, and the modeling results are validated by the secondary-ion-mass-spectrum (SIMS) measurement. The surface effect on the fluorine’s stability and its improvement by passivation are also successfully modeled.|
|Rights: ||© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.|
|Appears in Collections:||ECE Conference Papers|
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