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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6269
Title: Atomistic modeling of fluorine implantation and diffusion in III-nitride semiconductors
Authors: Yuan, Li
Wang, Maojun
Chen, Kevin J.
Keywords: Fluorine implantation
GaN
Fluorine ions
Diffusion process
Issue Date: Dec-2008
Citation: IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, USA, 15-17 December 2008, p. 1-4
Abstract: A hybrid molecular dynamics (MD)/kinetic Monte Carlo (KMC) model is developed for atomistic modeling of fluorine ion implantation and diffusion in AlGaN/GaN heterostructures. The MD simulation reveals the F distribution profiles and the corresponding defect profiles, and most importantly, the potential energies of fluorine ions in the III-nitride material system. Using the results from the MD simulation, the diffusion process is simulated with KMC method, and the modeling results are validated by the secondary-ion-mass-spectrum (SIMS) measurement. The surface effect on the fluorine’s stability and its improvement by passivation are also successfully modeled.
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URI: http://hdl.handle.net/1783.1/6269
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