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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/6441
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| Title: | 一种透反式液晶器件及其制备方法 |
| Authors: | Kwok, Hoi-Sing (郭海成)
Wong, Man (王文)
Meng, Zhiguo (孟志國) |
| Keywords: | Nickel
Crystallization
Amorphous silicon transflective
Electrode |
| Issue Date: | 24-Feb-2010 |
| Citation: | 中國專利 ZL 200580049823.2 |
| Abstract: | 本发明描述电极的构建用于液晶显示器，该显示器采用一种在可见光谱区显示吸收性低于20% 的大晶粒低吸收多晶硅，本发明显示制备有源矩阵的衬底，薄膜晶体管的源极、漏极及沟道区和象素电极是相连地形成多硅单层。 |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=584> |
| URI: | http://hdl.handle.net/1783.1/6441 |
| Appears in Collections: | ECE Patents
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Files in This Item:
| File |
Description |
Size | Format |
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| ZL2005800498232.pdf | | 2755Kb | Adobe PDF | View/Open |
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