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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6441
Title: 一种透反式液晶器件及其制备方法
Authors: Kwok, Hoi-Sing (郭海成)
Wong, Man (王文)
Meng, Zhiguo (孟志國)
Keywords: Nickel
Crystallization
Amorphous silicon transflective
Electrode
Issue Date: 24-Feb-2010
Citation: 中國專利 ZL 200580049823.2
Abstract: 本发明描述电极的构建用于液晶显示器,该显示器采用一种在可见光谱区显示吸收性低于20% 的大晶粒低吸收多晶硅,本发明显示制备有源矩阵的衬底,薄膜晶体管的源极、漏极及沟道区和象素电极是相连地形成多硅单层。
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=584>
URI: http://hdl.handle.net/1783.1/6441
Appears in Collections:ECE Patents

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