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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6580
Title: Fabrication and characterization of horizontally aligned carbon nanotubes for interconnect application
Authors: Chai, Yang
Xiao, Zhiyong
Chan, Philip Ching-Ho
Keywords: Carbon nanotubes
Polysilicon structure
Silicon oxide
Electrical property
Scaling effect
Interconnect line
Issue Date: May-2009
Citation: Proceedings 59th Electronic Components and Technology Conference, 2009. ECTC 2009, San Diego, CA, USA, 26-29 May 2009, p. 1465-1469
Abstract: We discuss the use of electron-shading effect during the plasma-enhanced chemical vapor deposition to control the growth of carbon nanotubes (CNTs). We designed and fabricated the trench and island test structures. The horizontally aligned CNTs were grown from the sidewall of the polysilicon structure, parallel to the silicon oxide surface. We investigated the electrical property of the CNT number for the interconnect line application. We also studied the scaling effect of the CNT number. This approach provides a method to implement complex CNT structure by in-stiu growth, and integrate them to realize various electrical devices and interconnect lines.
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URI: http://hdl.handle.net/1783.1/6580
Appears in Collections:ECE Conference Papers

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