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Title: The application of carbon nanotubes in CMOS integrated circuits
Authors: Chan, Philip Ching-Ho
Yang, Chai
Zhang, Min
Fu, Yunyi
Keywords: CMOS integrated circuits
Carbon nanotubes
Elemental semiconductors
Nanotube device
Issue Date: Oct-2008
Citation: Proceedings 9th International Conference on Solid-State and Integrated Circuit Technology, 2008, ICSICT 2008, Beijing, China, 20-23 October 2008, p. 534-536
Abstract: With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.
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