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Title: A 405-nW CMOS temperature sensor based on linear MOS operation
Authors: Law, Man Kay
Bermak, Amine
Keywords: CMOS temperature sensor
Ultralow-power applications
Issue Date: Dec-2009
Citation: IEEE transactions on circuits and systems. II, Express briefs, vol. 56, no. 12, December 2009, p. 891-895.
Abstract: This brief presents a CMOS temperature sensor suitable for ultralow-power applications.With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-μm one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of −0.8°C to + 1°C from 0°C to 100°C after calibration is achieved.
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