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| Title: | A 405-nW CMOS temperature sensor based on linear MOS operation |
| Authors: | Law, Man Kay
Bermak, Amine |
| Keywords: | CMOS temperature sensor
Ultralow-power applications |
| Issue Date: | Dec-2009 |
| Citation: | IEEE transactions on circuits and systems. II, Express briefs, vol. 56, no. 12, December 2009, p. 891-895. |
| Abstract: | This brief presents a CMOS temperature sensor suitable for ultralow-power applications.With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-μm one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of −0.8°C to + 1°C from 0°C to 100°C after calibration is achieved. |
| Rights: | © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. |
| URI: | http://hdl.handle.net/1783.1/6677 |
| Appears in Collections: | ECE Journal/Magazine Articles
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| A405nW.pdf | | 333Kb | Adobe PDF | View/Open |
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