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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/7221
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| Title: | Enhancement-mode III-N devices, circuits, and methods |
| Authors: | Chen, Jing
Cai, Yong
Lau, Kei May |
| Keywords: | Enhancement mode
HEMT
Compound semiconductor
Selective epitaxy
Selective growth
GaN
Gallium nitride
Plasma
ICP |
| Issue Date: | 26-Apr-2011 |
| Citation: | US Patent 7,932,539 B2 2011 |
| Abstract: | A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing ofthe sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET). |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=494> |
| URI: | http://hdl.handle.net/1783.1/7221 |
| Appears in Collections: | ECE Patents
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Files in This Item:
| File |
Description |
Size | Format |
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| US7932539.pdf | | 3221Kb | Adobe PDF | View/Open |
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