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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/7228
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| Title: | Transflective liquid crystal device and method of manufacturing the same |
| Authors: | Kwok, Hoi-Sing
Wong, Man
Meng, Zhiguo |
| Keywords: | Nickel
Crystallization
Amorphous silicon transflective
Electrode |
| Issue Date: | 6-Sep-2011 |
| Citation: | US Patent 8,013,957 B2 2011 |
| Abstract: | The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region (108b, 108c, 108d) of the TFTs as well as the pixel-electrode (108e) are formed conjointly in a single poly-Si layer. |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=583> |
| URI: | http://hdl.handle.net/1783.1/7228 |
| Appears in Collections: | ECE Patents
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Files in This Item:
| File |
Description |
Size | Format |
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| US8013957TTC.PA.0199_20110922.pdf | | 428Kb | Adobe PDF | View/Open |
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