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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7247
Title: Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal
Authors: Yue, Zhounan
Wong, George K. L.
Zhong, Yongchun
Xi, Yan Yan
Hsu, Yuk Fan
Djurišić, Aleksandra B.
Dong, Jian-Wen
Chen, Wen-Jie
Wong, Kam-Sing
Keywords: ZnO
electrodeposition
Excitons
Photoluminescence
Photonic band gap
Photonic crystals
Spontaneous emission
zinc compounds
Issue Date: 8-Nov-2010
Citation: Applied physics letters, v. 97, 191102 (2010)
Abstract: ZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/
URI: http://hdl.handle.net/1783.1/7247
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