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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7248
Title: Impurity effect on weak antilocalization in the topological insulator Bi2Te3
Authors: He, Hongtao
Wang, Gan
Zhang, Tao
Sou, Philip Iam-Keong
Wong, George K. L.
Wang, Jiannong
Keywords: WAL
Bi2Te3
Weak localization
Topological
Insulator
Magnetoconductance
Impurities
Crossover
Issue Date: 21-Apr-2011
Citation: Physical review letters, v. 106, 166805 (2011)
Abstract: We study the weak antilocalization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the £k Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi2Te3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.
Rights: Physical Review Letters © copyright (2011) American Physical Society. The Journal's web site is located at http://prl.aps.org/
URI: http://hdl.handle.net/1783.1/7248
Appears in Collections:PHYS Journal/Magazine Articles

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