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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/7261
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| Title: | Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs |
| Authors: | Chen, Jing
Cai, Yong
Lau, Kei May |
| Keywords: | Enhancement mode
HEMT
Compound semiconductor
Etch
Gallium nitride
GaN
Selective epitaxy
Selective growth
Plasma
ICP
Mems
Microelectromechanica |
| Issue Date: | 5-Jul-2011 |
| Citation: | US Patent 7,972,915 B2, 2011 |
| Abstract: | A method for and devices utilizing monolithic integration of enhancement-mode and depletion-modeAIGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the er由ancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing ofthe sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment.卫lÏ s method provides a complete planar process for GaN -based integrated circuits favored in high-density and high-speed applications. |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=497> |
| URI: | http://hdl.handle.net/1783.1/7261 |
| Appears in Collections: | ECE Patents
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Files in This Item:
| File |
Description |
Size | Format |
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| US7972915TTC.PA.02652_20110722.pdf | | 3381Kb | Adobe PDF | View/Open |
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