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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7519
Title: Low density drain HEMTs
Authors: Chen, Jing
Lau, Kei May
Keywords: Enhancement mode
HEMT
Normally-off
Breakdown
Issue Date: 25-Oct-2011
Citation: US Patent 8,044,432 B2, 2011
Abstract: Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies.
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=498>
URI: http://hdl.handle.net/1783.1/7519
Appears in Collections:ECE Patents

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