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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/7519
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| Title: | Low density drain HEMTs |
| Authors: | Chen, Jing
Lau, Kei May |
| Keywords: | Enhancement mode
HEMT
Normally-off
Breakdown |
| Issue Date: | 25-Oct-2011 |
| Citation: | US Patent 8,044,432 B2, 2011 |
| Abstract: | Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies. |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=498> |
| URI: | http://hdl.handle.net/1783.1/7519 |
| Appears in Collections: | ECE Patents
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Files in This Item:
| File |
Description |
Size | Format |
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| US8044432TTC.PA.02653_20120301.pdf | | 1890Kb | Adobe PDF | View/Open |
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