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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7536
Title: Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
Authors: Chen, Jing
Chen, Wanjun
Zhou, Chunhua
Keywords: Diode
GaN
Gallium nitride
Rectifier
Issue Date: 13-Dec-2011
Citation: US Patent 8,076,699 B2, 2011
Abstract: Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a shorted ohmic contact and a Schottky contact, and a cathode containing an ohmic contact, while the HEMT preferably has a gate containing a Schottky contact. Two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the ( electron gas) chaunels in both structures at the hetero-interface between the epitaxial layers.
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=890>
URI: http://hdl.handle.net/1783.1/7536
Appears in Collections:ECE Patents

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