|
HKUST Institutional Repository >
Electronic and Computer Engineering >
ECE Patents >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1783.1/7542
|
| Title: | 低密度漏極HEMT |
| Authors: | Chen, Jing
Lau Kei May |
| Keywords: | Enhancement mode
HEMT
Normally-off
Breakdown
GaN |
| Issue Date: | 1-Dec-2010 |
| Citation: | 中國專利 ZL 200680052007.1 |
| Abstract: | 用於製作AIGaN/GaN常閉高電子遷移率晶體管(HEMT)的方法及裝置。基於氟(基於陰离子)的等离子體處理或低能离子注入用来修改漏極側表面场分布，而不使用場極板電極。截止狀態擊穿電壓可得到提高，以及電流崩塌可在LDD-HEMT中被完全抑制，而没有出現增益和截止頻率的明顯降級。 |
| Rights: | This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=804> |
| URI: | http://hdl.handle.net/1783.1/7542 |
| Appears in Collections: | ECE Patents
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| CNZL200680052007.1TTC.PA.02653_20101214.pdf | | 19651Kb | Adobe PDF | View/Open |
|
All items in this Repository are protected by copyright, with all rights reserved.
|
