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Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7542
Title: 低密度漏極HEMT
Authors: Chen, Jing
Lau, Kei May
Keywords: Enhancement mode
HEMT
Normally-off
Breakdown
GaN
Issue Date: 1-Dec-2010
Citation: 中國專利 ZL 200680052007.1
Abstract: 用於製作AIGaN/GaN常閉高電子遷移率晶體管(HEMT)的方法及裝置。基於氟(基於陰离子)的等离子體處理或低能离子注入用来修改漏極側表面场分布,而不使用場極板電極。截止狀態擊穿電壓可得到提高,以及電流崩塌可在LDD-HEMT中被完全抑制,而没有出現增益和截止頻率的明顯降級。
Rights: This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=804>
URI: http://hdl.handle.net/1783.1/7542
Appears in Collections:ECE Patents

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