Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1007

Dopant activation in poly-Si1-xGex at low temperature

Authors Jin, ZH
Meng, ZG
Gururaj, BA
Yeung, M
Kwok, HS
Wong, M
Issue Date 1997
Source PROCEEDINGS OF THE FOURTH ASIAN SYMPOSIUM ON INFORMATION DISPLAY, 1997, p. 65-68
Summary Isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3 to 0.55 was reported in this paper. In low temperature (double left arrow 600 degrees C) annealing, grain boundary segregation causes both the conductivity and the Hall mobility to decrease during extended annealing. The effective activation of phosphorus was less than 20% and decreases with increasing Ge content, Boron activation could reach above 70%, It was also found that Si1-xGex could be oxidized at 600 degrees C in a conventional furnace even with pure N-2 protection.
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ISBN 962-8273-01-9
Language English
Format Conference paper
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