Please use this identifier to cite or link to this item:

Fabrication of mesoscopic devices using atomic force microscopic electric field induced oxidation

Authors Lee, FK
Wen, GH
Zhang, XX
Tsui, OKC
Issue Date 2003
Source Nano Science and Technology : Novel Structures and Phenomena, 2nd Croucher ASI on Nano Science and Technology, HKUST, Hong Kong. Taylor and Francis , 2003, p. 193-199
Summary We demonstrate the fabrication of mesoscopic devices on aluminum thin film by using atomic force microscopic (AFM) electric field induced oxidation together with selective wet etching. The device structure being demonstrated is a percolating network consisting of conducting dots (70 nm in diameter) randomly distributed within an area of 1 x 1 μm2. Details on how to fabricate the network structure and the making of electrical contacts to the device will be focused upon. Good agreement between the temperature-dependent resistivity and Hall coefficient measurements of an aluminum control sample we made and those reported in the literature for bulk aluminum warrants reliability of our sample fabrication technique.
ISBN 0-415-30832-1
Language English
Format Conference paper
Access View full-text via Web of Science
Files in this item:
File Description Size Format
NanoSci05.pdf 765492 B Adobe PDF