Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1226

CHARACTERIZATION OF BURIED NITRIDE SILICON-ON-INSULATOR SUBSTRATE

Authors POON, MC
LAM, YW
WONG, SP
Issue Date 1992
Source Semiconductor science and technology, v. 7, (3), 1992, MAR, p. 414-417
Summary Buried nitride silicon-on-insulator (SOI) substrates prepared using stationary beam synthesis have been characterized. It is found that surface Si layers and alpha and beta-phase silicon nitride layers of good quality can be formed in the SOI structure if the implant and annealing conditions are suitably controlled. However, the high nitrogen content inside the surface Si layer has been found to create new problems to the direct fabrication of devices on the SOI substrate.
Subjects
ISSN 0268-1242
Rights Semiconductor Science and Technology © copyright 1992 IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/0268-1242/
Language English
Format Article
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