Please use this identifier to cite or link to this item:

The study of damage profiles in MeV Si+-implanted LiNbO3 crystals by Rutherford backscattering and oxygen resonance scattering

Authors Shi, BR HKUST affiliated (currently or previously)
Cue, N.
Issue Date 1996
Source Journal OF PHYSICS d-applied PHYSICS , v. 29, (2), 1996, FEB 14, p. 419-423
Summary X-cut LiNbO3 crystals were implanted with 1.0 MeV Si+ using doses ranging from 3X10(14) to 2X10(15) ions cm(-2). The 3.3 MeV He2+ Rutherford backscattering/channelling technique was used to analyse the implanted LiNbO3 crystals. The spectra obtained demonstrate that the scattering peaks of the elastic resonance of 3.045 MeV He-4 with O-16 show a broadened half-width. With increasing implant dose, the damage peak of the Nb atoms shifts to the lower-energy side, and the apparent half-width of the resonance peak becomes narrower. The results are explained as being due to the different reduction of stopping power in a channelling direction for He ions after different dose implantations. The reduction of the stopping power for channelled ions can be deduced from the different half-widths of the resonance scattering peaks for spectra corresponding to aligned and random beam directions. The damage depth distributions for implanted LiNbO3 crystals were obtained after considering the corresponding reductions of channelled stopping power. The result shows that the damage profiles for lower dose implantation were shallower than these predicted by TRIM'90 (Transport of ions in Matter 1990), but they were in good agreement with our calculation.
ISSN 0022-3727
Rights Journal of Physics D: Applied Physics © copyright (1996) IOP Publishing Ltd. The Journal's web site is located at
Language English
Format Article
Access View full-text via Web of Science
View full-text via Scopus
Files in this item:
File Description Size Format
d60220.pdf 109256 B Adobe PDF