Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1293

Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

Authors Li, CY
Sun, BQ
Jiang, DS
Wang, JN
Issue Date 2001
Source Semiconductor science and technology , v. 16, (4), 2001, APR, p. 239-242
Summary We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.
Subjects
ISSN 0268-1242
Rights Semiconductor Science and Technology © Copyright (2001) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/SST
Language English
Format Article
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