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Buckling of polysilicon microbeams during sacrificial layer removal

Authors Zhang, TY View this author's profile
Zhang, X.
Zohar, Y. HKUST affiliated (currently or previously)
Issue Date 1998
Source Journal of micromechanics and microengineering , v. 8, (3), 1998, SEP, p. 243-249
Summary In situ observations of buckling evolution of polysilicon microbeams during etch of the underneath sacrificial layer were carried out under an optical microscope. The surface geometry was obtained by AFM measurements. As the etching progressed, three buckling patterns were identified. Closed formulas were derived from theoretical analysis based on both boundary conditions: simply supported and clamped. The theory predicts either the buckling pattern for a given residual stress or the compressive stress level for a given buckling pattern. The residual stress evaluated from the buckling pattern agrees with that measured by the curvature method.
ISSN 0960-1317
Rights Journal of Micromechanics and Microengineering © Copyright (1998) IOP Publishing Ltd. The Journal's web site is located at
Language English
Format Article
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