Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1315

Ge islanding growth on nitridized Si and the effect of Sb surfactant

Authors Hu, YF
Wang, XS
Cue, N
Wang, X
Issue Date 2002
Source Journal OF physics-condensed MATTER , v. 14, (39), 2002, OCT 7, p. 8939-8946
Summary The growth modes of Ge islands on SiNx-covered Si with and without a surfactant Sb layer are studied by scanning tunnelling microscopy. It is observed that on SiNx/Si(111), Sb cannot enhance the coverage of (I 11) facets of Ge islands, which are the dominant features in the late stage of Ge overlayer growth when Sb is not used. However, on SiNx/Si(001), Sb favours the growth of Ge(001) facets, which will shrink during the islanding growth if Sb is not used. The different behaviours with the (111) and (001) substrates suggest that the surfactant effect of Sb on the islanding growth of Ge on SiNx/Si is strongly orientation dependent.
Subjects
Ge
ISSN 0953-8984
Rights Journal of Physics: Condensed Matter © Copyright (2002) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM
Language English
Format Article
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