Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1444

Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

Authors Liu, NZ
Li, GH
Zhu, ZM
Han, HX
Wang, ZP
Ge, WK
Sou, IK
Issue Date 1998
Source Journal OF physics-condensed MATTER , v. 10, (18), 1998, MAY 11, p. 4119-4129
Summary We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).
Note Journal of Physics: Condensed Matter © copyright (1998) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM
Subjects
ISSN 0953-8984
Language English
Format Article
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