Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1444

Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

Authors Liu, NZ
Li, GH
Zhu, ZM
Han, HX
Wang, ZP
Ge, WK HKUST affiliated (currently or previously)
Sou, IK View this author's profile
Issue Date 1998
Source Journal of Physics: Condensed Matter , v. 10, (18), 1998, p. 4119-4129
Summary We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).
Note Journal of Physics: Condensed Matter © copyright (1998) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM
Subjects
ISSN 0953-8984
Language English
Format Article
Access View full-text via DOI
View full-text via Web of Science
View full-text via Scopus
Find@HKUST
Files in this item:
File Description Size Format
c81818.pdf 157592 B Adobe PDF