Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1445

Wavelength tuning in GaAsAlGaAs quantum wells by InAs submonolayer insertion

Authors Xu, ZY
Wang, J
Wang, Y
Ge, WK
Li, Q
Li, SS
Henini, M
Issue Date 1999
Source Journal OF physics-condensed MATTER , v. 11, (17), 1999, MAY 3, p. 3629-3633
Summary Wavelength tuning of exciton emissions has been achieved simply by inserting an InAs submonolayer at the centre of GaAs quantum wells during molecular beam epitaxy growth. Photoluminescence measurements show that the emission energy can be effectively tuned from the quantum-well-determined energy down to less than the band gap of GaAs, depending on the well width as well as the InAs layer thickness. Using the effective-mass approximation, the tuning effect can be well predicted theoretically The results reported here may provide an alternative way to tune the wavelength in optoelectronic devices.
Note Journal of Physics: Condensed Matter © copyright (1999) IOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/JPhysCM
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ISSN 0953-8984
Language English
Format Article
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