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Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

Authors Liu, B.
Li, Q.
Xu, ZY
Ge, WK HKUST affiliated (currently or previously)
Issue Date 2001
Source Journal OF physics-condensed MATTER , v. 13, (18), 2001, MAY 7, p. 3923-3930
Summary By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump-probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple technique, with the clear advantage of being easy to carry out, can be very useful in studying the carrier dynamics for some specific structures such as InAs ultrathin layers embedded in a GaAs matrix described here.
Note Journal of Physics: Condensed Matter © copyright (2001) IOP Publishing Ltd. The Journal's web site is located at
ISSN 0953-8984
Language English
Format Article
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