Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/18634

Defect emissions in ZnO nanostructures

Authors Djurisic, A.B.
Leung, Y.H.
Tam, K.H.
Hsu, Y.F.
Ding, L. HKUST affiliated (currently or previously)
Ge, W.K. HKUST affiliated (currently or previously)
Zhong, Y.C. HKUST affiliated (currently or previously)
Wong, K.S. View this author's profile
Chan, W.K.
Tam, H.L.
Cheah, K.W.
Kwok, W.M.
Phillips, D.L.
Issue Date 2007
Source Nanotechnology , v. 18, (9), 2007, MAR 7
Summary Defects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions.
ISSN 0957-4484
Language English
Format Article
Access View full-text via DOI
View full-text via Web of Science
View full-text via Scopus
Find@HKUST